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S29GL128P11FFI020 参数 Datasheet PDF下载

S29GL128P11FFI020图片预览
型号: S29GL128P11FFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 71 页 / 1568 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( A d v a n c e I n f o r m a t i o n )  
Figure 7.2 Write Buffer Programming Operation  
Write Unlock Cycles:  
Address 555h, Data AAh  
Address 2AAh, Data 55h  
Unlock Cycle 1  
Unlock Cycle 2  
Issue  
Write Buffer Load Command:  
Address SA, Data 25h  
Load Word Count to Program  
Program Data to Address:  
SA, wc  
wc = number of words – 1  
Yes  
Confirm command:  
wc = 0?  
No  
SA = 0x29h  
Wait 4 ms  
(Recommended)  
Write Next Word,  
Decrement wc:  
wc = wc – 1  
No  
Write Buffer  
Abort Desired?  
Perform Polling Algorithm  
(see Write Operation Status  
flowchart)  
Yes  
Write to a Different  
Sector Address to Cause  
Write Buffer Abort  
Yes  
Polling Status  
= Done?  
No  
No  
Error?  
Yes  
Yes  
Write Buffer  
Abort?  
No  
RESET. Issue Write Buffer  
Abort Reset Command  
PASS. Device is in  
read mode.  
FAIL. Issue reset command  
to return to read array mode.  
24  
S29GL-P MirrorBitTM Flash Family  
S29GL-P_00_A3 November 21, 2006