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S29GL128P11FFI020 参数 Datasheet PDF下载

S29GL128P11FFI020图片预览
型号: S29GL128P11FFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 71 页 / 1568 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( A d v a n c e I n f o r m a t i o n )  
Figure 11.15 Alternate CE# Controlled Write (Erase/Program) Operation Timings  
555 for program  
2AA for erase  
PA for program  
SA for sector erase  
555 for chip erase  
Data# Polling  
Addresses  
PA  
tWC  
tWH  
tAS  
tAH  
WE#  
OE#  
tGHEL  
tWHWH1 or 2  
tCP  
CE#  
Data  
tWS  
tCPH  
tDS  
tBUSY  
tDH  
DQ7#  
DOUT  
tRH  
A0 for program  
55 for erase  
PD for program  
30 for sector erase  
10 for chip erase  
RESET#  
RY/BY#  
Notes  
1. Figure 11.15 indicates last two bus cycles of a program or erase operation.  
2. PA = program address, SA = sector address, PD = program data.  
3. DQ7# is the complement of the data written to the device. D  
4. Waveforms are for the word mode.  
is the data written to the device.  
OUT  
November 21, 2006 S29GL-P_00_A3  
S29GL-P MirrorBitTM Flash Family  
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