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S29GL064N90TFI020 参数 Datasheet PDF下载

S29GL064N90TFI020图片预览
型号: S29GL064N90TFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
10.8 Erase Suspend/Erase Resume Commands  
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read  
data from, or program data to, any sector not selected for erasure. This command is valid only during the  
sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The  
Erase Suspend command is ignored if written during the chip erase operation or Embedded Program  
algorithm.  
When the Erase Suspend command is written during the sector erase operation, the device requires a typical  
of 5 μs (maximum of 20 μs) to suspend the erase operation. However, when the Erase Suspend command is  
written during the sector erase time-out, the device immediately terminates the time-out period and suspends  
the erase operation.  
After the erase operation is suspended, the device enters the erase-suspend-read mode. The system can  
read data from or program data to any sector not selected for erasure. (The device erase suspends all  
sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status  
information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is  
actively erasing or is erase-suspended. Refer to Write Operation Status on page 55 for information on these  
status bits.  
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read  
mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just  
as in the standard word program operation. Refer to Write Operation Status on page 55 for more information.  
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the  
Autoselect Mode on page 29 and Autoselect Command Sequence on page 42 sections for details.  
To resume the sector erase operation, the system must write the Erase Resume command. Further writes of  
the Resume command are ignored. Another Erase Suspend command can be written after the chip resumes  
erasing.  
During an erase operation, this flash device performs multiple internal operations which are invisible to the  
system. When an erase operation is suspended, any of the internal operations that were not fully completed  
must be restarted. As such, if this flash device is continually issued suspend/resume commands in rapid  
succession, erase progress is impeded as a function of the number of suspends. The result is a longer  
cumulative erase time than without suspends. Note that the additional suspends do not affect device reliability  
or future performance. In most systems rapid erase/suspend activity occurs only briefly. In such cases, erase  
performance is not significantly impacted.  
50  
S29GL-N MirrorBit® Flash Family  
S29GL-N_01_09 November 16, 2007