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S29GL064N90TFI020 参数 Datasheet PDF下载

S29GL064N90TFI020图片预览
型号: S29GL064N90TFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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Data
She et
Table 10.3
Command Definitions (x8 Mode, BYTE# = V
IL
)
Cycles
Bus Cycles (Notes
First
Addr
RA
XXX
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
SA
AAA
AAA
AAA
AAA
XXX
XXX
1
1
1
XXX
XXX
AA
Data
RD
F0
AA
AA
AA
AA
AA
AA
AA
AA
AA
29
AA
AA
AA
AA
A0
90
B0
30
98
555
555
555
555
PA
XXX
55
55
55
55
PD
00
AAA
AAA
AAA
AAA
F0
80
80
20
AAA
AAA
AA
AA
555
555
55
55
AAA
SA
10
30
555
555
555
555
555
555
555
555
555
55
55
55
55
55
55
55
55
55
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
SA
90
90
90
90
90
88
90
A0
25
XXX
PA
SA
00
PD
BC
PA
PD
WBL
PD
X00
X02
X02
X06
(SA)X04
00/01
01
7E
X1C
X1E
Second
Addr
Data
Third
Addr
Data
Addr
Fourth
Data
Addr
Fifth
Data
Addr
Sixth
Data
Command Sequence
Read
Reset
Autoselect
Manufacturer ID
Device ID
Device ID
Secured Silicon Sector Factory Protect
Sector Protect Verify
1
1
4
6
4
4
4
3
4
4
3
1
3
6
6
Enter Secured Silicon Sector Region
Exit Secured Silicon Sector Region
Program
Write to Buffer
Program Buffer to Flash
Write to Buffer Abort Reset
Chip Erase
Sector Erase
Unlock Bypass
Unlock Bypass Program
Unlock Bypass RESET
Program/Erase Suspend
Program/Erase Resume
CFI Query
Legend
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse,
whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE# or
CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased.
Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer page
as PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
10. Refer to
for data indicating Secured Silicon Sector
factory protect status.
11. Data is 00h for an unprotected sector and 01h for a protected sector.
12. Total number of cycles in command sequence is determined by number of
bytes written to write buffer. Maximum number of cycles in command
sequence is 37, including
Program Buffer to Flash
command.
13. Command sequence resets device for next command after aborted write-
to-buffer operation.
14. System may read and program in non-erasing sectors, or enter autoselect
mode, when in Erase Suspend mode. Erase Suspend command is valid
only during a sector erase operation.
15. Erase Resume command is valid only during Erase Suspend mode.
16. Command is valid when device is ready to read array data or when device
is in autoselect mode.
17. Refer to
for individual Device IDs per device density
and model number.
Notes
1. See
for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are 555 or
AAA as shown in table, address bits above A11 are don’t care.
5. Unless otherwise noted, address bits A21–A11 are don’t cares.
6. No unlock or command cycles required when device is in read mode.
7. Reset command is required to return to read mode (or to erase-suspend-
read mode if previously in Erase Suspend) when device is in autoselect
mode, or if DQ5 goes high while device is providing status information.
8. Fourth cycle of autoselect command sequence is a read cycle. Data bits
DQ15–DQ8 are don’t care. See
for more information.
9. For S29GL064N and S29GL032A Device ID must be read in three cycles.
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
®
Flash Family
53