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S29GL128N90TFI020 参数 Datasheet PDF下载

S29GL128N90TFI020图片预览
型号: S29GL128N90TFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a
S h e e t
Table 14.
Cycles
Command Sequence
(Notes)
Asynchronous Read (6)
Reset (7)
Manufacturer ID
Device ID (8)
Sector Protect Verify (9)
Secure Device Verify (10)
CFI Query (11)
Program
Write to Buffer (12)
Program Buffer to Flash
Write to Buffer Abort Reset (13)
Entry
Program (14)
Sector Erase (14)
Chip Erase (14)
Reset
Chip Erase
Sector Erase
Erase/Program Suspend (15)
Erase/Program Resume (16)
Entry
Program (17)
Read (17)
Exit (17)
Auto-
select
Unlock
Bypass
Mode
Secured
Silicon
Sector
Memory Array Commands (x8)
Second
Addr
Data
Bus Cycles (Notes
Third
Fourth
Addr
Data
Addr
Data
Fifth
Addr
Data
Sixth
Addr
Data
1
1
4
6
4
4
1
4
6
1
3
3
2
2
2
2
6
6
1
1
3
4
1
4
First
Addr
Data
RA
RD
XXX
F0
AAA
AA
AAA
AA
AAA
AA
AAA
AA
AA
98
AAA
AA
AAA
AA
SA
29
AAA
AA
AAA
AA
XXX
A0
XXX
80
XXX
80
XXX
90
AAA
AA
AAA
AA
XXX
B0
XXX
30
AAA
AA
AAA
AA
00
Data
AAA
AA
555
555
555
555
555
555
PA
555
PA
SA
SA
XXX
555
555
55
55
55
55
55
55
55
55
PD
30
10
00
55
55
AAA
AAA
AAA
AAA
AAA
PA
555
AAA
90
90
90
90
A0
25
F0
20
X00
X02
[SA]X04
X06
PA
SA
01
XX7E
Data
Data
PD
WC
X1C
Data
X1E
Data
PA
PD
WBL
PD
AAA
AAA
80
80
AAA
AAA
AA
AA
555
555
55
55
AAA
SA
10
30
555
555
555
55
55
55
AAA
AAA
AAA
88
A0
90
PA
XXX
PD
00
Legend:
X = Don’t care.
RA = Read Address.
RD = Read Data.
PA = Program Address. Addresses latch on the falling edge of WE#
or CE# pulse, whichever occurs later.
PD = Program Data. Data latches on the rising edge of WE# or CE#
pulse, whichever occurs first.
SA = Sector Address. Any address that falls within a specified sector.
See Tables
for sector address ranges.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
11. Command is valid when device is ready to read array data or
when device is in autoselect mode.
12. Total number of cycles in the command sequence is determined
by the number of words written to the write buffer.
13. Command sequence resets device for next command after
write-to-buffer operation.
14. Requires Entry command sequence prior to execution. Unlock
Bypass Reset command is required to return to reading array
data.
15. System may read and program in non-erasing sectors, or enter
the autoselect mode, when in the Erase Suspend mode. The
Erase Suspend command is valid only during a sector erase
operation.
16. Erase Resume command is valid only during the Erase Suspend
mode.
17. Requires Entry command sequence prior to execution. Secured
Silicon Sector Exit Reset command is required to exit this mode;
device may otherwise be placed in an unknown state.
Notes:
1. See
on page 13 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles.
4. Address and data bits not specified in table, legend, or notes are
don’t cares (each hex digit implies 4 bits of data).
5. Writing incorrect address and data values or writing them in the
improper sequence may place the device in an unknown state.
The system must write the reset command to return reading
array data.
6. No unlock or command cycles required when bank is reading
array data.
7. Reset command is required to return to reading array data in
certain cases. See
section for details.
8. Data in cycles 5 and 6 are listed in
on page 37.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. PPB Status Read provides the same data but in
inverted form.
10. If DQ7 = 1, region is factory serialized and protected. If DQ7 =
0, region is unserialized and unprotected when shipped from
factory. See
on
page 43 for more information.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
65