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S29GL128N90TFI020 参数 Datasheet PDF下载

S29GL128N90TFI020图片预览
型号: S29GL128N90TFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a
S h e e t
START
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1
Yes
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid
address is any sector address within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 =
1
because DQ7 may change simulta-
neously with DQ5.
Figure 5. Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Al-
gorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final
WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY#
pins can be tied together in parallel with a pull-up resistor to V
CC
.
If the output is low (Busy), the device is actively erasing or programming. (This includes pro-
gramming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read
mode, the standby mode, or in the erase-suspend-read mode.
shows
the outputs for RY/BY#.
68
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006