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S29GL128N90TFI020 参数 Datasheet PDF下载

S29GL128N90TFI020图片预览
型号: S29GL128N90TFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a
S h e e t
Test Conditions
3.3 V
Device
Under
Test
CL
6.2 kΩ
2.7 kΩ
Note:
Diodes are IN3064 or equivalent
Figure 9.
Table 17.
Test Condition
Output Load
Output Load Capacitance, C
L
(including jig capacitance)
Input Rise and Fall Times
Input Pulse Levels
Test Setup
Test Specifications
All Speeds
1 TTL gate
30
5
0.0–V
IO
0.5V
IO
0.5 V
IO
pF
ns
V
V
V
Unit
Input timing measurement reference levels (See
Note)
Output timing measurement reference levels
Note:
If V
IO
< V
CC
, the reference level is 0.5 V
IO
.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
75