欢迎访问ic37.com |
会员登录 免费注册
发布采购

S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL128P90FFIR10的Datasheet PDF文件第69页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第70页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第71页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第72页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第74页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第75页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第76页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第77页  
Da ta
Shee t
(Prelimi nar y)
Table 12.6
System Interface String
Addresses (x16)
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Addresses (x8)
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
Data
0027h
0036h
0000h
0000h
0006h
0006h
0009h
0013h
0003h
0005h
0003h
0002h
Description
V
CC
Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
V
CC
Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
V
PP
Min. voltage (00h = no V
PP
pin present)
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
µs
Typical timeout for Min. size buffer write 2
N
µs (00h = not supported)
Typical timeout per individual block erase 2
N
ms
Typical timeout for full chip erase 2
N
ms (00h = not supported)
Max. timeout for byte/word write 2
N
times typical
Max. timeout for buffer write 2
N
times typical
Max. timeout per individual block erase 2
N
times typical
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Table 12.7
Device Geometry Definition
Addresses (x16)
Addresses (x8)
Data
001Bh
001Ah
0019h
0018h
0002h
0000h
0006h
0000h
0001h
Device Size = 2
N
byte
1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 0003h, 0000h, 0002h =1 Gb
00FFh, 0001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
Description
27h
4Eh
28h
29h
2Ah
2Bh
2Ch
50h
52h
54h
56h
58h
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
5Ah
5Ch
5Eh
60h
60h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
00xxh
000xh
0000h
000xh
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
Erase Block Region 3 Information (refer to CFI publication 100)
Erase Block Region 4 Information (refer to CFI publication 100)
November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
®
Flash Family
73