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S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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Data
Sheet
(Pre limin ar y)
Table 12.3
S29GL-P Memory Array Command Definitions, x8
Cycles
Bus Cycles (Notes
First
Addr
RA
XXX
AAA
AAA
AAA
AAA
AA
AAA
AAA
SA
AAA
AAA
XXX
XXX
XXX
XXX
AAA
AAA
XXX
XXX
AAA
AAA
Data
RD
F0
AA
AA
AA
AA
98
AA
AA
29
AA
AA
A0
80
80
90
AA
AA
B0
30
AA
AA
555
555
55
55
AAA
AAA
88
90
XX
00
555
555
PA
SA
XXX
XXX
555
555
55
55
PD
30
10
00
55
55
AAA
AAA
80
80
AAA
AAA
AA
AA
555
555
55
55
AAA
SA
10
30
555
AAA
F0
20
555
555
55
55
AAA
SA
A0
25
PA
SA
PD
WC
WBL
PD
WBL
PD
555
555
555
555
55
55
55
55
AAA
AAA
AAA
AAA
90
90
90
90
X00
X02
[SA]X04
X06
01
XX7E
X1C
X1E
Second
Addr
Data
Third
Addr
Data
Fourth
Addr
Data
Fifth
Addr
Data
Sixth
Addr
Data
Command (Notes)
Read
Reset
Autoselect (8,9)
Manufacturer ID
Device ID
Sector Protect Verify
Secure Device Verify
1
1
4
4
4
4
1
4
3
1
3
3
2
2
2
2
6
6
1
1
3
4
CFI Query
Program
Write to Buffer
Program Buffer to Flash (confirm)
Write-to-Buffer-Abort Reset
Unlock Bypass
Enter
Program
Sector Erase
Chip Erase
Reset
Chip Erase
Sector Erase
Erase Suspend/Program Suspend
Erase Resume/Program Resume
Secured Silicon Sector Entry
Secured Silicon Sector Exit
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on
the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge
of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased.
Address bits A
max
–A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write
buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1.
11. The data value for DQ7 is “1” for a serialized, protected Secured Silicon
Sector region and “0” for an unserialized, unprotected region. See
for data and definitions.
12. Command is valid when device is ready to read array data or when device
is in autoselect mode.
13. Command sequence returns device to reading array after being placed in
a Write-to-Buffer-Abort state. Full command sequence is required if
resetting out of abort while in Unlock Bypass mode.
14. The Unlock-Bypass command is required prior to the Unlock-Bypass-
Program command.
15. The Unlock-Bypass-Reset command is required to return to reading array
data when the device is in the unlock bypass mode.
16. The system can read and program/program suspend in non-erasing
sectors, or enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
17. The Erase Resume/Program Resume command is valid only during the
Erase Suspend/Program Suspend modes.
18. The Exit command returns the device to reading the array.
Notes
1. See
for description of bus operations.
2. All values are in hexadecimal.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits A
MAX
:A16 are don’t cares for unlock and command cycles,
unless SA or PA required. (A
MAX
is the Highest Address pin.).
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when
device is in the autoselect mode, or if DQ5 goes high (while the device is
providing status data).
8. See
for device ID values and definitions.
9. The fourth, fifth, and sixth cycles of the autoselect command sequence are
read cycles.
10. The data is 00h for an unprotected sector and 01h for a protected sector.
See
for more information. This is same as PPB
Status Read except that the protect and unprotect statuses are inverted
here.
70
S29GL-P MirrorBit
®
Flash Family
S29GL-P_00_A7 November 8, 2007