SS22-SS215
RATINGS
AND CHARACTERISTIC
CURVES (SS22 THRU SS215)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
2.0
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
50
8.3ms Single Half Sine Wave
JEDEC Method
AT RATED TL
AVERAGE FORWARD CURRENT. (A)
RESISTIVE OR
INDUCTIVE LOAD
1.5
SS22-SS24
SS25-SS215
40
30
1.0
20
0.5
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
LEAD TEMPERATURE. (
O
C)
10
0
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG.4-TYPICALREVERSE CHARACTERISTICS
FIG.3- TYPICAL FORWARD CHARACTERISTICS
50
100
SS22-SS24
SS25-SS215
TJ=125
C
10
O
TJ=25 C
O
INSTANTANEOUS FORWARD CURRENT. (A)
10
SS25-SS26
INSTANTANEOUS REVERSE CURRENT. (mA)
SS22-SS24
1
1
TJ=75
C
O
SS29-SS210
0.1
0.1
SS215
0.01
TJ=25
C
O
PULSE WIDTH=300 S
1% DUTY CYCLE
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE. (
O
C/W)
400
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
JUNCTION CAPACITANCE.(pF)
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
100
O
10
1
10
0.1
SS29-SS215
SS22-SS24
SS25-SS26
1
10
100
0.1
0.01
0.1
1
T, PULSE DURATION. (sec)
10
100
REVERSE VOLTAGE. (V)
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
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without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or
V
implication, in relation to
by
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
04/05/2007 Rev.1.00
www.SiliconStandard.com
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SSC [ SILICON STANDARD CORP. ]
