SSM4502GM
P-Channel
12
10000
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
9
6
C (pF)
I
D
= -5A
V
DS
= -16V
1000
C
iss
100
3
C
oss
C
rss
0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
10
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
-I
D
(A)
100us
1ms
1
0.2
10ms
100ms
1s
0.1
0.1
0.05
P
DM
t
T
0.02
0.1
T
A
=25
o
C
Single Pulse
0.01
0.1
1
10
DC
30
0.01
Single Pulse
-30
0.001
0.01
0.1
1
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
0.01
100
0.0001
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
02/13/2008 Rev.1.00
www.SiliconStandard.com
10
SSC [ SILICON STANDARD CORP. ]
