SSM4502GM
N-Channel
12
10000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
I
D
=8A
V
DS
= 10 V
8
1000
C
iss
C
oss
C
rss
6
C (pF)
100
10
4
2
0
0
10
20
30
40
50
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
100us
10
Normalized Thermal Response (R
thja
)
0.2
1ms
I
D
(A)
1
0.1
0.1
0.05
10ms
100ms
0.02
0.01
P
DM
0.01
t
T
Single Pulse
0.1
1s
T
A
=25
o
C
Single Pulse
DC
1
10
100
30
0.001
0.0001
0.001
0.01
0.1
-30
1
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
0.01
0.1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
02/13/2008 Rev.1.00
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SSC [ SILICON STANDARD CORP. ]
