SSM9971GM
ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
(at Tj = 25°C, unless otherwise specified)
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25°C, I
D
=1mA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=2.5A
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.06
-
-
-
7
-
-
-
32.5
4.9
8.8
9.6
10
30
5.5
1658
156
109
Max. Units
-
-
50
60
3
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
V
V/°C
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
∆
BV
DSS
/
∆
Tj
R
DS(ON)
Static drain-source on-resistance
2
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate threshold voltage
Forward transconductance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
Drain-source leakage current
V
DS
=60V, V
GS
=0V
V
DS
=48V ,V
GS
=0V, Tj = 70°C
V
GS
=±25V
I
D
=5A
V
DS
=48V
V
GS
=10V
V
DS
=30V
I
D
=5A
R
G
=3.3Ω , V
GS
=10V
R
D
=6Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-source leakage current
Total gate charge
2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time
2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward voltage
2
Test Conditions
I
S
=1.6A, V
GS
=0V
I
S
=5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
29.2
48
Max. Units
1.2
-
-
V
ns
nC
Reverse-recovery time
Reverse-recovery charge
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
10/16/2005 Rev.3.1
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SSC [ SILICON STANDARD CORP. ]
