SSM9971GM
f=1.0MHz
14
10000
I
D
=5A
12
V
GS
, Gate to Source Voltage (V)
10
V
DS
=48V
V
DS
=38V
V
DS
=30V
Ciss
1000
8
6
Coss
4
100
Crss
2
0
0
5
10
15
20
25
30
35
40
10
1
5
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
9
13
17
21
25
29
Fig 7. Gate charge characteristics
Fig 8. Typical capacitance characteristics
100
1
Duty foctor=0.5
Normalized Thermal Response (R
θja
)
10
0.2
1ms
I
D
(A)
0.1
0.1
0.05
1
10ms
100ms
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
θja
=135°C/W
0.1
T
A
=25
o
C
Single Pulse
1s
DC
0.01
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum safe operating area
Fig 10. Effective transient thermal impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching time waveforms
Fig 12. Gate charge diagram
10/16/2005 Rev.3.1
www.SiliconStandard.com
4 of 5
SSC [ SILICON STANDARD CORP. ]
