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SST25VF512 参数 Datasheet PDF下载

SST25VF512图片预览
型号: SST25VF512
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的SPI串行闪存 [512 Kbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 23 页 / 264 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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512 Kbit SPI Serial Flash
SST25VF512
Data Sheet
Write-Enable (WREN)
The Write-Enable (WREN) instruction sets the Write-
Enable-Latch bit to 1 allowing Write operations to occur.
The WREN instruction must be executed prior to any Write
(Program/Erase) operation. CE# must be driven high
before the WREN instruction is executed.
CE#
MODE 3
0 1 2 3 4 5 6 7
SCK
MODE 0
SI
MSB
06
HIGH IMPEDANCE
1192 F35.6
SO
FIGURE 11: W
RITE
E
NABLE
(WREN) S
EQUENCE
Write-Disable (WRDI)
The Write-Disable (WRDI) instruction resets the Write-
Enable-Latch bit and AAI bit to 0 disabling any new Write
operations from occurring. CE# must be driven high before
the WRDI instruction is executed.
CE#
MODE 3
0 1 2 3 4 5 6 7
SCK
MODE 0
SI
MSB
04
HIGH IMPEDANCE
1192 F36.6
SO
FIGURE 12: W
RITE
D
ISABLE
(WRDI) S
EQUENCE
Enable-Write-Status-Register (EWSR)
The Enable-Write-Status-Register (EWSR) instruction
arms the Write-Status-Register (WRSR) instruction and
opens the status register for alteration. The Enable-Write-
Status-Register instruction does not have any effect and
will be wasted, if it is not followed immediately by the Write-
©2004 Silicon Storage Technology, Inc.
Status-Register (WRSR) instruction. CE# must be driven
low before the EWSR instruction is entered and must be
driven high before the EWSR instruction is executed.
S71192-06-000
4/04
12