SST29EE010-90-4C-WH 参数 Datasheet PDF下载

1 Megabit Page-Mode EEPROM

SST29EE010 / SST29LE010 / SST29VE010

T

ABLE

7: P

OWER

-

UP

T

IMINGS

Symbol

T

PU-READ(1)

T

PU-WRITE(1)

Parameter

Power-up to Read Operation

Power-up to Write Operation

Maximum

100

5

Units

µs

ms

304 PGM T7.0

1

2

3

304 PGM T8.0

T

ABLE

8: C

APACITANCE

(T

a

= 25 °C, f=1 MHz, other pins open)

Parameter

C

I/O(1)

C

IN(1)

Note:

(1)

This

Description

I/O Pin Capacitance

Input Capacitance

Test Condition

V

I/O =

0V

V

IN =

0V

Maximum

12 pF

6 pF

4

5

parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

T

ABLE

9: R

ELIABILITY

C

HARACTERISTICS

Symbol

Parameter

N

END

T

DR(1)

V

ZAP_HBM(1)

V

ZAP_MM(1)

I

LTH(1)

Note:

(1)

This

Minimum Specification

10,000

100

2000

200

100

Units

Cycles

Years

Volts

Volts

mA

Test Method

JEDEC Standard A117

JEDEC Standard A103

JEDEC Standard A114

JEDEC Standard A115

JEDEC Standard 78

304 PGM T9.3

6

7

8

9

10

11

12

13

14

15

16

Endurance

Data Retention

ESD Susceptibility

Human Body Model

ESD Susceptibility

Machine Model

Latch Up

parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

© 2000 Silicon Storage Technology, Inc.

9

304-3 6/00