16 Mbit Concurrent SuperFlash
SST36VF1601
Data Sheet
TABLE 6: S
YSTEM
I
NTERFACE
I
NFORMATION
Address
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
Data
0027H
0036H
0000H
0000H
0004H
0000H
0004H
0006H
0001H
0000H
0001H
0001H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min (00H = no V
PP
pin)
V
PP
max (00H = no V
PP
pin)
Typical time out for Word-Program 2
N
µs (2
4
= 16 µs)
Typical time out for min size buffer program 2
N
µs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip-Erase 2
N
ms (2
6
= 64 ms)
Maximum time out for Word-Program 2
N
times typical (2
1
x 2
4
= 32 µs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
4
= 32 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
6
= 128 ms)
T6.0 373
TABLE 7: D
EVICE
G
EOMETRY
I
NFORMATION
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0015H
0001H
0000H
0000H
0000H
0002H
00FFH
0003H
0008H
0000H
003FH
0000H
0000H
0001H
Data
Device size = 2
N
Bytes (15H = 21; 2
21
= 2 MByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of bytes in multi-byte write = 2
N
(00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 1023 + 1 = 1024 sectors (03FFH = 1023)
z = 8 x 256 Bytes = 4 KByte/sector (0008H = 8)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 31 + 1 = 32 blocks (001FH = 31)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T7.3 373
©2001 Silicon Storage Technology, Inc.
S71142-06-000 11/01 373
10
SST [ SILICON STORAGE TECHNOLOGY, INC ]
