欢迎访问ic37.com |
会员登录 免费注册
发布采购

SST36VF1601-70-4E-BK 参数 Datasheet PDF下载

SST36VF1601-70-4E-BK图片预览
型号: SST36VF1601-70-4E-BK
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位并行的SuperFlash [16 Mbit Concurrent SuperFlash]
分类和应用:
文件页数/大小: 26 页 / 400 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
 浏览型号SST36VF1601-70-4E-BK的Datasheet PDF文件第8页浏览型号SST36VF1601-70-4E-BK的Datasheet PDF文件第9页浏览型号SST36VF1601-70-4E-BK的Datasheet PDF文件第10页浏览型号SST36VF1601-70-4E-BK的Datasheet PDF文件第11页浏览型号SST36VF1601-70-4E-BK的Datasheet PDF文件第13页浏览型号SST36VF1601-70-4E-BK的Datasheet PDF文件第14页浏览型号SST36VF1601-70-4E-BK的Datasheet PDF文件第15页浏览型号SST36VF1601-70-4E-BK的Datasheet PDF文件第16页  
16 Mbit Concurrent SuperFlash
SST36VF1601
Data Sheet
TABLE 8: DC O
PERATING
C
HARACTERISTICS
V
DD
= 2.7-3.6V
Limits
Symbol
I
DD
Parameter
Active V
DD
Current
Read
Program and Erase
Concurrent Read/Write
I
SB
I
RT
I
LI
I
LO
V
IL
V
ILC
V
IH
V
IHC
V
OL
V
OH
Standby V
DD
Current
Reset V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input Low Voltage (CMOS)
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
V
DD
-0.2
0.7 V
DD
V
DD
-0.3
0.2
35
40
75
20
20
1
1
0.8
0.3
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
CE#=V
IHC
, V
DD
=V
DD
Max
RST# = V
SS
± 0.3V
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=100 µA, V
DD
=V
DD
Min
I
OH
=-100 µA, V
DD
=V
DD
Min
T8.6 373
Min
Max
Units
Test Conditions
Address input=V
IL
/V
IH
, at f=1/T
RC
Min,
V
DD
=V
DD
Max
CE#=OE#=V
IL
, WE#=V
IH
, all I/Os open
CE#=V
IL
, OE#=V
IH
TABLE 9: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
100
Units
µs
µs
T9.2 373
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: C
APACITANCE
Parameter
C
I/O1
C
IN1
(Ta = 25°C, f=1 Mhz, other pins open)
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
10 pF
10 pF
T10.0 373
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T11.1 373
I
LTH1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
S71142-06-000 11/01 373
12