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SST37VF020-70-3C-NHE 参数 Datasheet PDF下载

SST37VF020-70-3C-NHE图片预览
型号: SST37VF020-70-3C-NHE
PDF下载: 下载PDF文件 查看货源
内容描述: 512千位/ 1兆位/ 2兆位/ 4兆位( X8 )许多时间内可编程Flash [512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash]
分类和应用: 内存集成电路
文件页数/大小: 18 页 / 216 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash  
SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040  
Data Sheet  
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum  
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation  
of the device at these conditions or conditions greater than those defined in the operational sections of this data  
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)  
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C  
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VDD+0.5V  
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2.0V to VDD+2.0V  
Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V  
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W  
Through Hole Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C  
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . “with-Pb” units1: 240°C for 3 seconds  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . “non-Pb” units: 260°C for 3 seconds  
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
1. Certain “with-Pb” package types are capable of 260°C for 3 seconds; please consult the factory for the latest information.  
2. Outputs shorted for no more than one second. No more than one output shorted at a time.  
OPERATING RANGE  
AC CONDITIONS OF TEST  
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns  
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 100 pF  
See Figures 8 and 9  
Range  
Ambient Temp  
VDD  
Commercial  
0°C to +70°C  
2.7-3.6V  
TABLE 4: Read Mode DC Operating Characteristics VDD=2.7-3.6V (TA = 0°C to +70°C (Commercial))  
Limits  
Symbol  
Parameter  
Min  
Max  
Units Test Conditions  
Address input=VILT/VIHT, at f=1/TRC Min  
IDD  
VDD Read Current  
VDD=VDD Max  
12  
15  
1
mA  
µA  
µA  
µA  
V
CE#=VIL, OE#=VIHT, all I/Os open  
CE#=VIHC, VDD=VDD Max  
VIN=GND to VDD, VDD=VDD Max  
VOUT=GND to VDD, VDD=VDD Max  
VDD=VDD Min  
ISB  
ILI  
Standby VDD Current  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
ILO  
VIL  
VIH  
VIHC  
VOL  
VOH  
IH  
10  
0.8  
Input High Voltage  
0.7 VDD  
VDD-0.3  
V
VDD=VDD Max  
Input High Voltage (CMOS)  
Output Low Voltage  
V
VDD=VDD Max  
0.2  
V
IOL=100 µA, VDD=VDD Min  
IOH=-100 µA, VDD=VDD Min  
CE#=OE#=VIL, A9=VH Max  
Output High Voltage  
Supervoltage Current for A9  
VDD-0.3  
V
200  
µA  
T4.6 1151  
©2006 Silicon Storage Technology, Inc.  
S71151-07-000  
8/06  
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