512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040
Data Sheet
AC CHARACTERISTICS
TABLE 9: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 2.7-3.6V
(Ta = 0°C to +70°C (Commercial))
SST37VF512-70
SST37VF010-70
SST37VF020-70
SST37VF040-70
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
0
0
0
30
30
Min
70
70
70
35
Max
SST37VF512-90
SST37VF010-90
SST37VF020-90
SST37VF040-90
Min
90
90
90
45
0
0
30
30
0
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
T9.2 397
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: P
ROGRAM
/E
RASE
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 2.7-3.6V
(Ta = 25°C±5°C)
Symbol
T
BP
T
CES
T
CEH
T
AS
T
AH
T
DS
T
DH
T
PRT
T
VPS
T
VPH
T
PW
T
EW
T
VR
T
ART
T
A9S
T
A9H
Parameter
Byte-Program Time
CE# Setup Time
CE# Hold Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
OE# Rise Time for Program and Erase
OE# Setup Time for Program and Erase
OE# Hold Time for Program and Erase
WE# Program Pulse Width
WE# Erase Pulse Width
OE#/A
9
Recovery Time for Erase
A
9
Rise Time to 12V during Erase
A
9
Setup Time during Erase
A
9
Hold Time during Erase
Min
12
1
1
1
1
1
1
1
1
1
10
100
1
1
1
1
15
500
Max
20
Units
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
T10.0 397
©2001 Silicon Storage Technology, Inc.
S71151-02-000 5/01
397
7
SST [ SILICON STORAGE TECHNOLOGY, INC ]
