8 Mbit / 16 Mbit Multi-Purpose Flash
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016
Data Sheet
TABLE 6: S
YSTEM
I
NTERFACE
I
NFORMATION
Address
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
Data
27H
1
30H
36H
00H
00H
04H
00H
04H
06H
01H
00H
01H
01H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min. (00H = no V
PP
pin)
V
PP
max. (00H = no V
PP
pin)
Typical time out for Byte-Program 2
N
µs (2
4
= 16 µs)
Typical time out for min. size buffer program 2
N
µs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip-Erase 2
N
ms (2
6
= 64 ms)
Maximum time out for Byte-Program 2
N
times typical (2
1
x 2
4
= 32 µs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
4
= 32 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
6
= 128 ms)
T6.1 396
FOR
SST39VF320/640
1. 0030H for SST39LF080/016 and 0027H for SST39VF080/016
TABLE 7: D
EVICE
G
EOMETRY
I
NFORMATION
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
14H
00H
00H
00H
00H
02H
FFH
00H
10H
00H
0FH
00H
00H
01H
FOR
SST39LF/VF080
Data
Device size = 2
N
Bytes (14H = 20; 2
20
= 1 MBytes)
Flash Device Interface description; 0000H = x8-only asynchronous interface
Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 255 + 1 = 256 sectors (00FFH = 255)
z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 15 + 1 = 16 blocks (000FH = 15)
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T7.0 396
©2001 Silicon Storage Technology, Inc.
S71146-03-000 6/01
396
8
SST [ SILICON STORAGE TECHNOLOGY, INC ]
