16 Megabit Multi-Purpose Flash
SST39VF160Q / SST39VF160
Advance Information
T
ABLE
6: S
YSTEM
I
NTERFACE
I
NFORMATION
Address
Data
Data
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0027H
0036H
0000H
0000H
0003H
0000H
0001H
0009H
0001H
0000H
0001H
0001H
Vdd Min. (Program/erase)
DQ4-DQ7: Volts, DQ3-DQ0: millivolts
Vdd Max. (Program/erase)
DQ4-DQ7: Volts, DQ3-DQ0: millivolts
Vpp min. (00H = no Vpp pin)
Vpp max. (00H = no Vpp pin)
Typical time out for word program 2
N
µs
Typical time out for min. size buffer program 2
N
µs (00H = not supported)
Typical time out for individual sector erase 2
N
ms
Typical time out for chip erase 2
N
ms
Maximum time out for word program 2
N
times typical
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual sector erase 2
N
times typical
Maximum time out for chip erase 2
N
times typical
329 PGM T6.2
1
2
3
4
5
6
7
T
ABLE
7: D
EVICE
G
EOMETRY
I
NFORMATION
Address
Data
Data
27H
0015H
Device size = 2
N
byte
28H
0001H
Flash Device Interface description (Refer to CFI publication 100)
29H
0000H
2AH
0000H
Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
2BH
0000H
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
35H
36H
37H
38H
39H
3AH
3BH
3CH
0002H
00FFH
0001H
0010H
0000H
001FH
0000H
0000H
0001H
0000H
0000H
0000H
0000H
0000H
0000H
0000H
0000H
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or publication 100)
y = 511 + 1 = 512 sectors (01FF = 511)
z = 16 x 256 bytes = 4K bytes/sector (0010H = 16)
Erase Block Region 2 Information
(refer to the CFI specification or publication 100)
y = 31 + 1 = 32 blocks (001F = 31)
z = 256 x 256 bytes = 64K bytes/block (0100H = 256)
Erase Block Region 3 Information
(refer to the CFI specification or publication 100)
8
9
10
11
12
13
14
Erase Block Region 3 Information
(refer to the CFI specification or publication 100)
15
329 PGM T7.3
16
© 1998 Silicon Storage Technology, Inc.
7
329-09 11/98
SST [ SILICON STORAGE TECHNOLOGY, INC ]
