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ST6006T220RG 参数 Datasheet PDF下载

ST6006T220RG图片预览
型号: ST6006T220RG
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道阳城模式MOSFET [N Channel Enchancement Mode MOSFET]
分类和应用:
文件页数/大小: 8 页 / 201 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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N Channel Enchancement Mode MOSFET
60V/60A
ORDERING INFORMATION
Part Number
ST6006T220TG
ST6006T220RG
Package
TO-220-3L
TO-263-2L
ST6006S / ST6006
Part Marking
ST6006D
ST6006
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150
) T
A
=25℃
T
A
=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θ
JA
Typical
60
+/-20
60
39
120
60
120
3.7
150
-55/150
40
62.5
Unit
V
V
A
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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