N Channel Enhancement Mode MOSFET
STN4412
6.8A
※
STN4412S8TG
S8 : SOP-8 ; T : Tube ; G : Pb – Free
ABSOULTE MAXIMUM RATINGS
(Ta = 25
℃
Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=150
℃
)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
TA=25℃
TA=70
℃
TA=25℃
TA=70
℃
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±20
6.8
5.6
30
2.3
2.8
1.6
150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
STANSON [ STANSON TECHNOLOGY ]
