STN6303
Dual N Channel Enhancement Mode MOSFET
1.0A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
=0V,I
D
=250uA
V
DS
=VGS,I
D
=250uA
V
DS
=0V,V
GS
=+/-12V
V
DS
=20V,V
GS
=0V
V
DS
=20V,V
GS
=0V
T
J
=85℃
V
DS
≦
5V,V
GS
=4.5V
V
GS
=4.5V,I
D
=0.5A
V
GS
=2.7V,I
D
=0.2A
V
DS
=10V,I
D
=1.2A
I
S
=0.5A,V
GS
=0V
2.5
385
530
2.6
0.8
1.2
400
550
m
S
V
23
0.35
1.0
±100
1
5
uA
V
V
nA
Symbol
Condition
Min
Typ
Max
Unit
I
D(on)
R
DS(on)
g
fs
V
SD
A
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
V
DS
=10V,V
GS
=0V
f=1MHz
V
DS
=10V,V
GS
=4.5V,V
DS
=0.7A
1.2
0.2
0.3
110
34
16
5
8
10
1.2
1.5
nC
pF
V
DD
=10V, RL=10 , I
D
=1.0A,
V
GEN
=4.5V, RG=6
10
15
18
2.8
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN6303 2008. V1
STANSON [ STANSON TECHNOLOGY ]
