STM8S105xx
Table 48: EMS data
Symbol Parameter
V
FESD
Conditions
Electrical characteristics
Level/
class
Voltage limits to be
applied on any I/O pin to V
DD
= 3.3 V, T
A
= 25 °C, f
MASTER
= 16 MHz
2/B
induce a functional
(HSI clock), conforming to IEC 61000-4-2
disturbance
Fast transient voltage
burst limits to be applied
through 100 pF on V
DD
V
DD
= 3.3 V, T
A
= 25 °C ,f
MASTER
= 16 MHz 4/A
and V
SS
pins to induce a (HSI clock),conforming to IEC 61000-4-4
functional disturbance
V
EFTB
(1)
Data obtained with HSI clock configuration, after applying HW recommendations described
in AN2860 (EMC guidelines for STM8S microcontrollers).
10.3.12.3 Electromagnetic interference (EMI)
Emission tests conform to the IEC61967-2 standard for test software, board layout and pin
loading.
Table 49: EMI data
Symbol Parameter Conditions
General
conditions
Monitored
frequency
band
Max f
HSE
/f
CPU
8 MHz/ 8
MHz
13
Unit
8 MHz/ 16
MHz
14
dBµV
S
EMI
Peak level
V
DD
= 5 V,
T
A
= +25 °C,
LQFP48
package
conforming to
IEC61967-2
0.1 MHz to
30 MHz
30 MHz to
130 MHz
23
19
130 MHz to 1 -4
GHz
SAE EMI
level
(1)
-4
2
1.5
—
Data based on characterization results, not tested in production.
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