STS01DTP06
Table 3: Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
P
tot
T
stg
T
J
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5ms)
Base Current
Base Peak Current (t
p
< 1ms)
Total Dissipation at T
C
= 25
o
C single
Total Dissipation at T
C
= 25
o
C couple
Storage Temperature
Max. Operating Junction Temperature
NPN
60
30
5
3
6
1
2
2
1.6
-65 to 150
150
PNP
-60
-30
-5
-3
-6
-1
-2
Unit
V
V
V
A
A
A
A
W
W
°C
°C
For PNP type voltage and current values are negative.
Table 4: Thermal Data
Symbol
Parameter
Max
Max
62.5
78
Unit
o
C/W
o
R
thj-amb(1)
Thermal Resistance Junction-ambient
(Single Operation)
(1)
Thermal Resistance Junction-ambient
R
thj-amb
C/W
(Dual Operation)
(1) When mounted on 1 inch square pad of 2 oz. copper, t
≤
10 sec
Table 5: Q1-NPN Transistor Electrical Characteristics (T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
CEO
I
EBO
(I
E
= 0)
Collector Cut-off Current
(I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
(BR)CEO
*
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
CE(sat)
*
V
BE(sat)
*
h
FE
*
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
I
C
= 1 A
I
C
= 2 A
I
C
= 1 A
I
C
= 1 A
I
C
= 3 A
* Pulsed: Pulsed duration = 300
ms,
duty cycle
≤
1.5
%.
Parameter
Collector Cut-off Current
V
CB
= 60 V
V
CE
= 30 V
V
EB
= 5 V
I
C
= 10 mA
Test Conditions
Min.
Typ.
Max.
0.1
1
1
Unit
µA
µA
µA
V
30
I
B
= 10 mA
I
B
= 100 mA
I
B
= 10 mA
V
CE
= 2 V
V
CE
= 2 V
100
30
0.35
0.85
1
0.7
1.1
V
V
V
2/8
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