TEA2025B 参数 Datasheet PDF下载

TEA2025B - TEA2025D

POWERDIP 12+2+2 PIN CONNECTION

(Top view)

BRIDGE

OUT.2

BOOT.2

GND

GND

FEEDBACK

IN.2 (+)

SVR

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

+Vs

OUT.1

BOOT.1

GND

GND

FEEDBACK

IN.1 (+)

GND (sub.)

SO 12+4+4 PIN CONNECTION

(Top view)

BRIDGE

OUT 2

BOOT 2

GND

GND

GND

GND

FEEDBACK

IN 2(+)

SVR

1

2

3

4

5

6

7

8

9

10

D94AU119

20

19

18

17

16

15

14

13

12

11

V

CC

OUT 1

BOOT 1

GND

GND

GND

GND

FEEDBACK

IN 1(+)

GND(Sub)

THERMAL DATA

Symbol

R

th j-case

R

th j-amb

Description

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

Max

SO 12+4+4 (*)

15

65

PDIP 12+2+2 (**)

15

60

Unit

°C/W

°C/W

(*) The R

th j-amb

is measured with 4sq cm copper area heatsink

(**) The R

th j-amb

is measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm

2.

2/9