TEA2025B - TEA2025D
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, V
CC
= 9V, Stereo unless otherwise specified)
Symbol
V
S
I
Q
V
O
A
V
∆A
V
R
j
PO
Parameter
Supply Voltage
Quiescent Current
Quiescent Output Voltage
Voltage Gain
Voltage Gain Difference
Input Impedance
Output Power (d = 10%)
Stereo 8 (per channel)
9V
9V
6V
6V
6V
6V
3V
3V
12V
9V
6V
6V
3V
3V
Stereo
Bridge
40
Test Conditions
Min.
3
Typ.
35
4.5
Max.
12
50
47
53
±1
Unit
V
mA
V
dB
dB
KΩ
Stereo
Bridge
43
49
45
51
30
4Ω
8Ω
4Ω
8Ω
16Ω
32Ω
4Ω
32Ω
8Ω
8Ω
4Ω
8Ω
16Ω
32Ω
1.7
0.7
2.3
1.3
1
0.6
0.25
0.13
0.1
0.02
2.4
4.7
2.8
1.5
0.18
0.06
0.3
0.5
46
1.5
3
52
3
6
1.5
W
Bridge
W
d
SVR
E
N
(
IN
)
CT
Distortion
Supply Voltage Rejection
Input Noise Voltage
Cross-Talk
Vs = 9V; R
L
= 4Ω
f = 100Hz, V
R
= 0.5V, R
g
= 0
R
G
= 0
R
G
= 10 4Ω
f = 1KHz, R
g
= 10KΩ
%
dB
mV
dB
40
Term. N° (PDIP)
DC VOLT (V)
1
0.04
2
4.5
3
8.9
4
0
5
0
6
0.6
7
0.04
8
8.5
9
0
10
0.04
11
0.6
12
0
13
0
14
8.9
15
4.5
16
9
Figure 1:
Bridge Application (Powerdip)
Figure 2:
Stereo Application (Powerdip)
C1
C10
C4
C8
C2
C11
C9
C3
C5
C6
C7
3/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
