VIPer12ADIP / VIPer12AS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS(sw)
V
DS(st)
I
D
V
DD
I
FB
V
ESD
T
j
T
c
T
stg
Parameter
Switching Drain Source Voltage (T
j
=25 ... 125°C)
Start Up Drain Source Voltage (T
j
=25 ... 125°C)
Continuous Drain Current
Supply Voltage
Feedback Current
Electrostatic Discharge:
Machine Model (R=0Ω; C=200pF)
Charged Device Model
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
(See note 1)
(See note 2)
Value
-0.3 ... 730
-0.3 ... 400
Internally limited
0 ... 50
3
200
1.5
Internally limited
-40 to 150
-55 to 150
Unit
V
V
A
V
mA
V
kV
°C
°C
°C
Note: 1. This parameter applies when the start up current source is off. This is the case when the V
DD
voltage has reached V
DDon
and
remains above V
DDoff
.
2. This parameter applies when the start up current source is on. This is the case when the V
DD
voltage has not yet reached V
DDon
or has fallen below V
DDoff
.
THERMAL DATA
Symbol
Rthj-case
Parameter
Thermal Resistance Junction-Pins for:
SO-8
DIP8
Thermal Resistance Junction-Ambient for:
SO-8
DIP8
(See note 1)
(See note 1)
Max Value
25
15
55
45
Unit
°C/W
Rthj-amb
°C/W
Note: 1. When mounted on a standard single-sided FR4 board with 200 mm² of Cu (at least 35
µm
thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS
(T
j
=25°C, V
DD
=18V, unless otherwise specified)
POWER SECTION
Symbol
BV
DSS
I
DSS
R
DSon
t
f
t
r
C
oss
Parameter
Drain-Source Voltage
Off State Drain Current
Static Drain-Source
On State Resistance
Fall Time
Rise Time
Drain Capacitance
Test Conditions
I
D
=1mA; V
FB
=2V
V
DS
=500V; V
FB
=2V; T
j
=125°C
I
D
=0.2A
I
D
=0.2A; T
j
=100°C
I
D
=0.1A; V
IN
=300V
I
D
=0.2A; V
IN
=300V
V
DS
=25V
(See fig.1)
(See note 1)
(See fig.1)
(See note 1)
27
Min.
730
0.1
30
54
Typ.
Max.
Unit
V
mA
Ω
ns
ns
pF
100
50
40
Note: 1. On clamped inductive load
3/15
STMICROELECTRONICS [ STMICROELECTRONICS ]
