VIPer12ADIP / VIPer12AS
ELECTRICAL CHARACTERISTICS
(T
j
=25°C, V
DD
=18V, unless otherwise specified)
SUPPLY SECTION
Symbol
I
DDch
I
DDoff
I
DD0
I
DD1
D
RST
V
DDoff
V
DDon
V
DDhyst
V
DDovp
Parameter
Start Up Charging
Current
Start Up Charging
Current
in Thermal Shutdown
Test Conditions
V
DS
=100V; V
DD
=5V ...V
DDon
(See fig. 2)
V
DD
=5V; V
DS
=100V
T
j
> T
SD
- T
HYST
0
3
(Note 1)
(See fig. 3)
(See fig. 2 & 3)
(See fig. 2 & 3)
(See fig. 2)
7
13
5.8
38
4.5
16
8
14.5
6.5
42
9
16
7.2
46
5
Min.
Typ.
-1
Max.
Unit
mA
mA
mA
mA
%
V
V
V
V
Operating Supply Current I =2mA
FB
Not Switching
Operating Supply Current I =0.5mA; I =50mA
FB
D
Switching
Restart Duty Cycle
V
DD
Undervoltage
Shutdown Threshold
V
DD
Start Up Threshold
V
DD
Threshold
Hysteresis
V
DD
Overvoltage
Threshold
Note: 1. These test conditions obtained with a resistive load are leading to the maximum conduction time of the device.
OSCILLATOR SECTION
Symbol
F
OSC
Parameter
Oscillator Frequency
Total Variation
Test Conditions
V
DD
=V
DDoff
... 35V; T
j
=0 ... 100°C
Min.
54
Typ.
60
Max.
66
Unit
kHz
PWM COMPARATOR SECTION
Symbol
G
ID
I
Dlim
I
FBsd
R
FB
t
d
t
b
t
ONmin
Parameter
I
FB
to I
D
Current Gain
Peak Current Limitation
I
FB
Shutdown Current
FB Pin Input Impedance
Current Sense Delay to
Turn-Off
Blanking Time
Minimum Turn On Time
I
D
=0mA
I
D
=0.2A
V
FB
=0V
Test Conditions
(See fig. 4)
(See fig. 4)
(See fig. 4)
(See fig. 4)
0.32
Min.
Typ.
320
0.4
0.9
1.2
200
500
700
0.48
A
mA
kΩ
ns
ns
ns
Max.
Unit
OVERTEMPERATURE SECTION
Symbol
T
SD
T
HYST
Parameter
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Test Conditions
(See fig. 5)
(See fig. 5)
Min.
140
Typ.
170
40
Max.
Unit
°C
°C
4/15
STMICROELECTRONICS [ STMICROELECTRONICS ]
