IRF40N03
P
OWER
MOSFET
V
G S
, G ate to S ource V oltage (V )
10
I
D
, Drain C urrent (A)
8
6
4
2
0
0
V
DS
=10V
I
D
=40A
300
200
100
1m
10
R
DS
(O
N)
i
L im
t
10
10
DC
s
ms
0m
1s
s
6
1
0.5
0.1
V
G S
=10V
S ingle P ulse
T c=25 C
5
10
15
20
25
30
35
40
1
10
30
60
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
V
DD
F igure 10. Maximum S afe
O perating Area
t
on
t
off
t
r
90%
V
IN
D
V
G S
R
GE N
G
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVE R TE D
90%
S
V
IN
50%
10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
r(t),Normalized E ffective
T ransient T hermal Impedance
1
D=0.5
0.2
0.1
0.1
P
DM
0.05
t
1
0.02
0.01
S ING LE P ULS E
0.01
10
-5
-4
-3
-2
-1
t
2
1.
2.
3.
4.
10
10
10
R
J A
(t)=r (t) * R
J A
R
J A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
J A
(t)
Duty C ycle, D=t
1
/t
2
1
10
10
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
Page 4
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