TC6320
N- Channel Electrical Characteristics (TJ = 25°C unless otherwise specified)
Symbol Parameter
Min
200
1.0
-
Typ
Max
-
Units
V
Conditions
BVDSS
VGS(th)
Drain-to-source breakdown voltage
Gate threshold voltage
-
-
-
-
-
-
VGS = 0V, ID = 2.0mA
VGS = VDS, ID = 1.0mA
2.0
-4.5
50
V
ΔVGS(th) Change in VGS(th) with temperature
mV/OC VGS = VDS, ID = 1.0mA
RGS
ΔRGS
VZGS
Gate-Source Shunt Resistor
Change in RGS with Temperature
Gate-Source Zener Voltage
10
-
KΩ
%/OC
V
IGS = 100µA
IGS = 100µA
IGS = 2.0mA
TBD
25
13.2
-
ΔVZGS Change in VZGS with Temperature
TBD
10.0
mV/OC IGS = 2.0mA
-
-
-
µA
VDS = Max rating, VGS = 0V
IDSS
Zero gate voltage drain current
ON-state drain current
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
-
1.0
mA
1.0
-
-
-
VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 4.5V, ID = 150mA
VGS = 10V, ID = 1.0A
VGS = 4.5V, ID =150mA
ID(ON)
A
2.0
-
-
-
8.0
7.0
1.0
-
Static drain-to-source ON-state resis-
tance
RDS(ON)
Ω
-
-
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
%/OC
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transconductance
Input capacitance
400
-
mmho VDS = 25V, ID = 200mA
-
-
-
-
-
-
-
-
-
-
110
60
23
10
15
20
15
1.8
-
VGS = 0V,
VDS = 25V,
f = 1MHz
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
-
pF
ns
-
-
VDD =25V,
ID = 1.0A,
RGEN = 25Ω
Rise time
-
td(OFF)
tf
Turn-OFF delay time
Fall time
-
-
-
VSD
Diode forward voltage drop
Reverse recovery time
V
VGS = 0V, ISD = 0.5A
VGS = 0V, ISD = 0.5A
trr
300
ns
Notes:
1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
N- Channel Switching Waveforms and Test Circuit
VDD
10V
90%
RL
Input
Pulse
OUTPUT
Generator
10%
0V
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
Input
D.U.T
tr
tf
VDD
10%
10%
90%
Output
0V
90%
2
SUPERTEX [ Supertex, Inc ]
