TC6320
P- Channel Electrical Characteristics
(T = 25°C unless otherwise specified)
J
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
V
GS(th)
ΔV
GS(th)
R
GS
ΔR
GS
VZ
GS
ΔVZ
GS
I
DSS
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate-source shunt resistor
Change in R
GS
with temperature
Gate-source zener voltage
Change in RGS with temperature
Zero gate voltage drain current
-200
-1.0
-
10
-
13.2
-
-
-
-1.0
-2.0
-
-
-
400
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
-
-2.4
4.5
50
TBD
25
TBD
-10
-1.0
-
-
10
8.0
1.0
-
200
55
30
10
15
20
15
-1.8
-
V
V
mV/
O
C
KΩ
%/
O
C
V
mV/
O
C
µA
mA
A
V
GS
= 0V, I
D
= -2.0µA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
I
GS
= 100µA
I
GS
= 100µA
I
GS
= -2mA
I
GS
= -2mA
V
DS
= Max rating, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= -4.5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -150mA
V
GS
= -10V, I
D
= -1.0A
V
GS
= -10V, I
D
=-200mA
V
DS
= -25V, I
D
= -200mA
V
GS
= 0V,
V
DS
= -25V,
f = 1MHz
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-state drain current
Static drain-to-source ON-state resis-
tance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Ω
%/
O
C
mmho
pF
ns
V
DD
= -25V,
I
D
= -1.0A,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= -0.5A
V
GS
= 0V, I
SD
= -0.5A
V
ns
Notes:
1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
P- Channel Switching Waveforms and Test Circuit
0V
Input
-10V
90%
t
(ON)
t
d(ON)
0V
Output
V
DD
t
r
90%
10%
t
(OFF)
t
d(OFF)
90%
R
L
10%
V
DD
t
f
Input
OUTPUT
R
GEN
D.U.T
10%
Pulse
Generator
3
SUPERTEX [ Supertex, Inc ]
