TP0620
Thermal Characteristics
Package
TO-92
I
D
(continuous)*
-175mA
I
D
(pulsed)
-0.8A
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
-175mA
I
DRM
-0.8A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
-200
-1.0
-2.4
-4.5
-100
-10
-1.0
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
-0.25
-0.75
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
300
100
150
85
30
10
150
85
35
10
15
20
16
-1.8
V
ns
V
GS
= 0V, I
SD
= -0.5A
V
GS
= 0V, I
SD
= -0.5A
ns
V
DD
= -25V
I
D
= -0.75A
R
GEN
= 25Ω
pF
9.0
7.0
15
12
1.7
Ω
%/°C
m
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
Conditions
V
GS
= 0V, I
D
= -2.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= -5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -5V, I
D
= -0.1A
V
GS
= -10V, I
D
= -0.2A
V
GS
= -10V, I
D
= -0.2A
V
DS
= -25V, I
D
= -0.4A
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE
GENERATOR
90%
t
(ON)
R
gen
t
(OFF)
t
r
t
d(OFF)
t
F
INPUT
t
d(ON)
0V
90%
OUTPUT
V
DD
90%
10%
10%
2
Ω
D.U.T.
OUTPUT
R
L
V
DD
SUPERTEX [ Supertex, Inc ]
