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TP0620 参数 Datasheet PDF下载

TP0620图片预览
型号: TP0620
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型垂直DMOS场效应管 [P-Channel Enhancement-Mode Vertical DMOS FETs]
分类和应用:
文件页数/大小: 4 页 / 477 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号TP0620的Datasheet PDF文件第1页浏览型号TP0620的Datasheet PDF文件第2页浏览型号TP0620的Datasheet PDF文件第3页  
TP0620
Typical Performance Curves
BV
DSS
Variation with Temperature
1.15
20
On-Resistance vs. Drain Current
1.1
16
V
GS
= -5V
V
GS
= -10V
BV
DSS
(normalized)
1.05
R
DS(ON)
(ohms)
12
1.0
8
0.95
4
0.9
-50
0
50
100
150
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
T
j
(°C)
Transfer Characteristics
-2.0
1.2
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.66
-5
5
V
DS
= -25V
A
°
C
=
1.1
1.33
V
GS(th)
(normalized)
I
D
(amperes)
1.0
T
A
R
DS(ON)
@
-10V, -0.2A
1.0
-1.0
=
T
A
0
15
°
C
0.9
0.66
V
(th)
@ -1mA
0.8
0.33
0
0
-2
-4
-6
-8
-10
0.7
-50
0
50
100
150
0
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
-10
T
j
(°C)
Gate Drive Dynamic Characteristics
0
f = 1MHz
-8
150
V
DS
= -10V
170 pF
C (picofarads)
V
GS
(volts)
-6
100
C
ISS
V
DS
= -40V
-4
50
C
OSS
C
RSS
0
0
-10
-20
-30
-40
-2
65 pF
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
(volts)
Q
G
(nanocoulombs)
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
T
=
25
°
C