VP3203
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*
IDRM
@ TA = 25°C
°C/W
°C/W
TO-92
TO-243AA
-0.65A
-1.1A
-4.0A
-4.0A
0.74W
1.6W†
125
15
170
78†
-0.65A
-1.1A
-4.0A
-4.0A
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Min
Typ
Max
Unit
Conditions
-30
V
VGS = 0V, ID = -10mA
VGS = VDS, ID = -10mA
VGS = VDS, ID = -10mA
VGS = ±20V, VDS = 0V
-1.0
-3.5
-5.5
-100
-10
V
Change in VGS(th) with Temperature
Gate Body Leakage
mV/°C
nA
-1.0
-14
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V, VDS = Max Rating
-1
mA
V
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
A
Ω
Ω
Ω
Ω
VGS = -10V, VDS = -5V
VGS = -4.5V, ID = -1.5A
VGS = -4.5V, ID = -0.75A
RDS(ON)
TO-92
1.0
1.0
0.6
0.6
1.0
Static Drain-to-Source
ON-State Resistance
SOT-89
TO-92
V
GS = -10V, ID = -3A
SOT-89
VGS = -10V, ID = -1.5A
VGS = -10V, ID = -1.5A
VDS = -25V, ID = -2A
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
%/°C
Ω
1.0
2.0
200
100
45
300
120
60
VGS = 0V, VDS = -25V
f = 1 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
10
VDD = -25V
ID = -2A
RGEN = 10Ω
Rise Time
15
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
25
25
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
-1.6
V
VGS = 0V, ISD = -1.5A
VGS = 0V, ISD = -1A
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
PULSE
GENERATOR
INPUT
90%
-10V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
OUTPUT
0V
INPUT
90%
90%
RL
OUTPUT
VDD
10%
10%
VDD
2
SUPERTEX [ Supertex, Inc ]
