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VP3203N3 参数 Datasheet PDF下载

VP3203N3图片预览
型号: VP3203N3
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型垂直DMOS场效应管 [P-Channel Enhancement-Mode Vertical DMOS FETs]
分类和应用:
文件页数/大小: 4 页 / 460 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号VP3203N3的Datasheet PDF文件第1页浏览型号VP3203N3的Datasheet PDF文件第2页浏览型号VP3203N3的Datasheet PDF文件第3页  
VP3203  
Typical Performance Curves  
BVDSS Variation with Temperature  
On-Resistance vs. Drain Current  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.1  
1.0  
0.9  
V
= -5V  
GS  
V
= -10V  
GS  
-50  
0
50  
100  
150  
0
-50  
0
-4  
-8  
-12  
-16  
-20  
I
D (amperes)  
Tj (°C)  
Transfer Characteristics  
V(th) and RDS Variation with Temperature  
-10  
-8  
-6  
-4  
-2  
0
1.4  
1.2  
1.0  
0.8  
0.6  
1.4  
1.2  
1.0  
0.8  
0.6  
R
@ -10V, -3A  
DS(ON)  
T
= -55°C  
A
25°C  
V
= -25V  
DS  
125°C  
V
@ -10mA  
(th)  
0
-2  
-4  
-6  
-8  
-10  
0
50  
100  
150  
VGS (volts)  
Tj (°C)  
Capacitance vs. Drain-to-Source Voltage  
f = 1MHz  
Gate Drive Dynamic Characteristics  
300  
225  
150  
75  
-10  
-8  
VDS = -10V  
CISS  
-6  
VDS  
= -20V  
335pF  
-4  
COSS  
-2  
0
CRSS  
200 pF  
1
0
-0  
-10  
-20  
-30  
2
3
4
5
QG (nanocoulombs)  
VDS (volts)  
11/12/01  
1235 Bordeaux Drive, Sunnyvale, CA 94089  
TEL: (408) 744-0100 • FAX: (408) 222-4895  
www.supertex.com  
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.