SPN6561
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±20V
V
DS
=30V,V
GS
=1.0V
V
DS
=30V,V
GS
=0.0V
T
J
=55℃
V
DS
≧4.5V,V
GS
=10V
V
DS
≧4.5V,V
GS
=4.5V
V
GS
= 10V,I
D
=2.8A
V
GS
=4.5V,I
D
=2.1A
V
DS
=4.5V,I
D
=2.5A
I
S
=1.25A,V
GS
=0V
30
1.0
3.0
±100
1
10
6
4
0.043
0.056
4.6
0.8
0.060
0.080
1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=15V
GS
=10V
I
D
≡2.5
4.5
0.8
1.0
240
110
17
8
10
nC
V
DS
=15V
GS
=0V
f=1MHz
pF
20
30
35
20
ns
V
DD
=15R
L
=15
I
D
≡1.0A,V
GEN
=10
R
G
=6Ω
12
17
8
2009/12/05
Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
