欢迎访问ic37.com |
会员登录 免费注册
发布采购

THN6601B 参数 Datasheet PDF下载

THN6601B图片预览
型号: THN6601B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN SiGe RF TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 7 页 / 281 K
品牌: TACHYONICS [ TACHYONICS CO,. LTD ]
 浏览型号THN6601B的Datasheet PDF文件第1页浏览型号THN6601B的Datasheet PDF文件第3页浏览型号THN6601B的Datasheet PDF文件第4页浏览型号THN6601B的Datasheet PDF文件第5页浏览型号THN6601B的Datasheet PDF文件第6页浏览型号THN6601B的Datasheet PDF文件第7页  
Specification
Thermal Characteristics
Symbol
R
th
j-s
Parameter
Thermal resistance from junction
to soldering point
Condition
P
tot
= 1.5 W; T
S
= 60
℃;
note 1
THN6601B
Value
55
Unit
K/W
Note 1. T
S
is the temperature at the soldering point of the collector pin.
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Collector Cut-off Current
Symbol
I
CBO
I
CEO
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 19 V, I
E
= 0 mA
V
CE
= 12 V, I
B
= 0 mA
V
EB
= 1.5 V, I
C
= 0 mA
V
CE
= 5 V, I
C
= 100 mA
V
CE
= 5 V, I
C
= 100 mA
V
CE
= 7 V, I
C
= 100 mA
Maximum Available Gain
MAG
V
CE
= 5 V, I
C
= 100 mA, f = 1 GHz
V
CE
= 7 V, I
C
= 100 mA, f = 1 GHz
Insertion Power Gain
|S
21
|
2
V
CE
= 5 V, I
C
= 100 mA, f = 1 GHz
V
CE
= 7 V, I
C
= 100 mA, f = 1 GHz
Reverse Transfer Capacitance
C
re
V
CB
= 6 V, I
E
= 0 mA, f = 1 MHz
50
4
5
8
9
5
5
6
7.0
11
12
7
7
1.9
Min.
Typ.
Max.
0.5
10
0.5
300
GHz
GHz
dB
dB
dB
dB
pF
Unit
h
FE
Classification
Marking
h
FE
Value
R1601
50 - 200
R1601
·
170 - 300
http://www.tachyonics.co.kr
July 2005.
Page 2 of 7
Rev. 1.0