Specification
□
Thermal Characteristics
Symbol
R
th
j-s
Parameter
Thermal resistance from junction
to soldering point
Condition
P
tot
= 1.5 W; T
S
= 60
℃;
note 1
THN6601B
Value
55
Unit
K/W
Note 1. T
S
is the temperature at the soldering point of the collector pin.
□
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Collector Cut-off Current
Symbol
I
CBO
I
CEO
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 19 V, I
E
= 0 mA
V
CE
= 12 V, I
B
= 0 mA
V
EB
= 1.5 V, I
C
= 0 mA
V
CE
= 5 V, I
C
= 100 mA
V
CE
= 5 V, I
C
= 100 mA
V
CE
= 7 V, I
C
= 100 mA
Maximum Available Gain
MAG
V
CE
= 5 V, I
C
= 100 mA, f = 1 GHz
V
CE
= 7 V, I
C
= 100 mA, f = 1 GHz
Insertion Power Gain
|S
21
|
2
V
CE
= 5 V, I
C
= 100 mA, f = 1 GHz
V
CE
= 7 V, I
C
= 100 mA, f = 1 GHz
Reverse Transfer Capacitance
C
re
V
CB
= 6 V, I
E
= 0 mA, f = 1 MHz
50
4
5
8
9
5
5
6
7.0
11
12
7
7
1.9
Min.
Typ.
Max.
0.5
10
0.5
300
GHz
GHz
dB
dB
dB
dB
pF
Unit
㎂
㎂
㎂
□
h
FE
Classification
Marking
h
FE
Value
R1601
50 - 200
R1601
·
170 - 300
http://www.tachyonics.co.kr
July 2005.
Page 2 of 7
Rev. 1.0