1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
TC4404
TC4405
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
100
2200 pF
80
tRISE (nsec)
1
Fall Time vs. Supply Voltage
100
2200 pF
100
TA = +25°C
1500 pF
tRISE (nsec)
Rise TIme vs. Capacitive Load
TA = +25°C
80
VDD = 5V
2
3
TA = +25°C
1500 pF
tFALL (nsec)
80
60
1000 pF
40
470 pF
20
100 pF
0
4
6
8
10 12
VDD
14
16
18
60
1000 pF
40
470 pF
20
100 pF
0
60
10V
15V
40
20
4
6
8
10 12
VDD
14
16
18
0
100
1000
CLOAD (pF)
10,000
Fall Time vs. Capacitive Load
100
TA = +25°C
80
tFALL (nsec)
TIME (nsec)
Rise and Fall Times
vs. Temperature
60
60
Propagation Delay
vs. Supply Voltage
CLOAD = 1000 pF
50
4
5
VDD = 5V
50
CLOAD = 1000 pF
VDD = 17.5V
DELAY TIME (nsec)
TA = +25°C
t D2
60
10V
15V
40
40
40
30
t FALL
20
t RISE
30
20
20
t D1
0
100
1000
CLOAD (pF)
10,000
10
–55 –35 –15 5 25 45 65 85 105 125
TEMPERATURE (°C)
10
4
6
8
10
12
VDD
14
16
18
6
7
Effect of Input Amplitude
on Delay Time
60
Propagation Delay Time
vs. Temperature
60
10
VDD = 17.5V
VLOAD = 1000 pF
50
DELAY TIME (nsec)
Quiescent Supply Current
vs. Voltage
TA = +25°C
CLOAD = 1000 pF
50
DELAY TIME (nsec)
IQUIESCENT (mA)
VDD = 10V
TA= +25°C
40
30
20
10
tD2
BOTH INPUTS = 1
1
40
t D2
30
20
t D1
tD1
0.1
BOTH INPUTS = 0
10
0
2
4
6
VDRIVE (V)
8
10
–55 –35 –15 5 25 45 65 85 105 125
TEMPERATURE (°C)
4
6
8
10 12
VDD
14
16
18
8
TELCOM SEMICONDUCTOR, INC.
4-223
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
