BUD600
Switching Characteristics
T
case
= 25°C, unless otherwise specified
Parameter
Test Conditions
Resistive load (figure 2)
Turn on time
I
C
= 0.3 A; I
B1
= 0.1 A; –I
B2
= 0.2 A;
;
;
;
V
S
= 250 V
Storage time
Fall time
Turn on time
I
C
= 1 A; I
B1
= 0.2 A; –I
B2
= 0.5 A;
;
;
;
V
S
= 250 V
Storage time
Fall time
Inductive load (figure 3)
Storage time
I
C
= 0.3 A; I
B1
= 0.1 A; –I
B2
= 0.2 A;
;
;
;
V
clamp
= 300 V; L = 200
m
H
Fall time
Storage time
I
C
= 1 A; I
B1
= 0.2 A; –I
B2
= 0.5 A;
;
;
;
V
clamp
= 300 V; L = 200
m
H
Fall time
Symbol
t
on
t
s
t
f
t
on
t
s
t
f
t
s
t
f
t
s
t
f
Min
Typ
0.15
1.6
0.5
0.25
0.8
0.15
1.6
0.3
0.8
0.1
Max
0.3
2
0.6
0.5
1
0.25
2
0.45
1
0.15
Unit
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
94 8863
V
S2
+
10 V
I
B
I
C
w
I5
I
measure
I
C
C
V
S1
+
0 to 30 V
V
(BR)CEO
t
p
T
t
p
3 Pulses
+
L
C
V
CE
V
(BR)CEO
+
0.1
+
10 ms
I
(BR)R
100 m
W
Figure 1. Test circuit for V
(BR)CE0
TELEFUNKEN Semiconductors
Rev. B2, 18-Jul-97
3 (9)
TEMIC [ TEMIC SEMICONDUCTORS ]
