TELEFUNKEN Semiconductors
BZT55C...
1000
D
V – Voltage Change ( mV )
Z
Typical Characteristics
(T
j
= 25_C unless otherwise specified)
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
T
j
= 25°C
100
I
Z
=5mA
10
1
40
80
120
160
200
95 9598
0
5
10
15
20
25
T
amb
– Ambient Temperature (
°C
)
V
Z
– Z-Voltage ( V )
Figure 1 : Total Power Dissipation vs. Ambient Temperature
Figure 2 : Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
1.3
V
Ztn
– Relative Voltage Change
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
10
1.1
4
2
5
I
Z
=5mA
0
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
0
60
120
180
240
95 9599
T
j
– Junction Temperature (
°C
)
95 9600
Figure 3 : Typical Change of Working Voltage vs. Junction
Temperature
Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
I
F
– Forward Current ( mA )
100
150
V
R
= 2V
100
T
j
= 25°C
10
T
j
= 25°C
1
0.1
0.01
0.001
50
0
0
95 9601
5
10
15
20
25
95 9605
0
0.2
0.4
0.6
0.8
1.0
V
Z
– Z-Voltage ( V )
Figure 5 : Diode Capacitance vs. Z–Voltage
V
F
– Forward Voltage ( V )
Figure 6 : Forward Current vs. Forward Voltage
Rev. A1: 12.12.1994
3
TEMIC [ TEMIC SEMICONDUCTORS ]
