BZT55C...
100
50
TELEFUNKEN Semiconductors
I
Z
– Z-Current ( mA )
P
tot
=500mW
T
amb
=25°C
60
I
Z
– Z-Current ( mA )
80
40
P
tot
=500mW
T
amb
=25°C
30
40
20
0
0
4
8
12
16
20
20
10
0
15
20
25
30
35
95 9604
V
Z
– Z-Voltage ( V )
Figure 7 : Z–Current vs. Z–Voltage
95 9607
V
Z
– Z-Voltage ( V )
Figure 8 : Z–Current vs. Z–Voltage
1000
r
Z
– Differential Z-Resistance (
W
)
I
Z
=1mA
100
5mA
10 10mA
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
V
Z
– Z-Voltage ( V )
Figure 9 : Differential Z–Resistance vs. Z–Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
DT/Z
thp
)
1/2
)/(2r
zj
)
t
p
/T=0.01
R
thJA
=300K/W
DT=T
jmax
–T
amb
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Figure 10 : Thermal Response
4
Rev. A1: 12.12.1994
TEMIC [ TEMIC SEMICONDUCTORS ]
