DG183/184/185
Typical Characteristics
5
Supply Current vs. Temperature
100
I
IN
vs. V
IN
and Temperature
V
INL
= 0
V
INH
= 5 V
4
(mA)
80
I
L
, I–, I+, I
–I–
2
–I
R
1
I+
I
IN
(mA)
R
3
I
L
60
–I
INL
40
20
I
INH
0
–55 –35 –15
5
25
45
65
85 105 125
0
–55 –35 –15
5
25
45
65
85
105 125
Temperature (_C)
100
Temperature (_C)
230
210
190
t
ON
, t
OFF
(ns)
170
150
130
110
t
OFF
r
DS(on)
vs. Temperature
DG185
Switching Time vs. V
D
and Temperature (DG183)
V
D
= 7.5 V
V
D
= –7.5 V
t
ON
r
DS(on)
(
W
)
DG184
10
DG183
V
D
= –7.5 V
I
S
= –10 mA
1
–50 –25
0
25
50
75
100
125
Temperature (_C)
90
–55 –35
–15
5
25
45
65
85
105 125
Temperature (_C)
Leakage vs. Temperature (DG183)
100
V+ = 10 V
V– = –20 V
V
L
= 5 V
V
R
= 0
t
ON
, t
OFF
(ns)
10
I
S
, I
D
(nA)
Switching Time vs. V
D
and Temperature (DG184/185)
130
120
110
100
90
80
70
t
OFF
V
D
= 7.5 V
V
D
= –7.5 V
t
ON
I
S(off)
1
I
D(on)
I
D(off)
0.1
25
45
65
85
105
125
Temperature (_C)
60
50
–55 –35
–15
5
25
45
65
85
105 125
Temperature (_C)
6
Siliconix
S-52895—Rev. D, 16-Jun-97
TEMIC [ TEMIC SEMICONDUCTORS ]
