DG417/418/419
Specificationsa for Unipolar Supplies
Test Conditions
Unless Otherwise Specified
A Suffix
–55 to 125_C
Mind Maxd Mind Maxd Unit
D Suffix
–40 to 85_C
V+ = 12 V, V– = 0 V
f
Parameter
Analog Switch
Analog Signal Range
Symbol
Tempb Typc
V
= 5 V, V = 2.4 V, 0.8 V
L
IN
e
V
Full
0
12
0
12
V
ANALOG
Drain-Source
On-Resistance
I
= –10 mA, V = 3.8 V
S
D
r
Room
40
W
DS(on)
V+ = 10.8 V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
t
Room
Room
110
40
ON
R
= 300 W, C = 35 pF, V = 8 V
L S
L
See Switching Time Test Circuit
t
OFF
ns
Break-Before-Make
Time Delay
t
R
C
= 300 W, C = 35 pF
DG419
Room
Room
60
5
D
L
L
Charge Injection
Q
= 10 nF, V = 0 V, R = 0 W
pC
L
gen
gen
Power Supplies
Positive Supply
Current
I+
I–
Room
Room
0.001
Negative Supply
Current
V+ = 13.2 V, V = 5.25 V
L
–0.001
mA
V
= 0 or 5 V
IN
Logic Supply Current
Ground Current
I
Room
Room
0.001
L
I
–0.001
GND
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
= input voltage to perform proper function.
IN
4
Siliconix
S-52880—Rev. D, 28-Apr-97
TEMIC [ TEMIC SEMICONDUCTORS ]
