DG417/418/419
Typical Characteristics (Cont’d)
Switching Time vs. Temperature
120
100
80
60
40
20
0
–55 –40 –20
(dB)
t
OFF
80
60
40
20
0
0
20
40
60
80
100
120
100
1k
10 k
100 k
1M
10 M
100 M
Temperature (_C)
f – Frequency (Hz)
V+ = 15 V
V– = –15 V
V
L
= 5 V
DG419
Source 1
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 3 V Pulse
t
ON
140
120
100
t
ON
, t
OFF
(ns)
Crosstalk and Off Isolation vs. Frequency
DG417/418/419
Source 2
Switching Time vs. Supply Voltages
80
130
120
110
Switching Time vs. V+
70
t
ON
, t
OFF
(ns)
t
ON
, t
OFF
(ns)
V– = 0 V
V
L
= 5 V
V
IN
= 3 V
t
ON
100
90
80
70
60
t
ON
V– = 0 V
V
L
= 5 V
V
IN
= 3 V
60
50
t
OFF
40
±10
±11
±12
±13
±14
±15
±16
Supply Voltage (V)
50
40
30
10
11
12
13
14
15
16
V+ Supply Voltage (V)
t
OFF
Power Supply Currents vs. Switching Frequency
10 mA
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 5 V, 50% D Cycle
1 mA
1
mA
100 nA
10 nA
Supply Current vs. Temperature
V+ = 16.5 V, V– = –16.5 V
V
L
= 5 V, V
IN
= 0 V
I+, I–
I
SUPPLY
I+, I–
10
mA
I
L
1
mA
I
SUPPLY
100
mA
1 nA
100 pA
10 pA
1 pA
I
GND
100 nA
100
1k
10 k
100 k
1M
10 M
f – Frequency (Hz)
0.1 pA
–55 –40 –20
0
20
40
60
80
100 120
Temperature (_C)
6
Siliconix
S-52880—Rev. D, 28-Apr-97
TEMIC [ TEMIC SEMICONDUCTORS ]
