DG417/418/419
Typical Characteristics (Cont’d)
Switching Time vs. Temperature
Crosstalk and Off Isolation vs. Frequency
140
120
100
80
120
V+ = 15 V, V– = –15 V
t
ON
V
= 5 V, V = 3 V Pulse
L
IN
DG417/418/419
Source 2
100
80
60
40
20
DG419
Source 1
t
OFF
60
40
V+ = 15 V
V– = –15 V
20
V
= 5 V
L
0
0
–55 –40 –20
0
20 40 60 80 100 120
100
1 k
10 k
100 k 1 M
10 M 100 M
Temperature (_C)
f – Frequency (Hz)
Switching Time vs. Supply Voltages
Switching Time vs. V+
130
120
110
80
70
60
50
100
90
t
ON
t
V– = 0 V
ON
V– = 0 V
V
= 5 V
L
V
V
= 5 V
= 3 V
V
= 3 V
L
IN
80
IN
70
60
50
40
30
t
OFF
t
OFF
40
10
11
12
13
14
15
16
±10
±11
±12
±13
±14
±15 ±16
Supply Voltage (V)
V+ Supply Voltage (V)
Power Supply Currents vs. Switching Frequency
Supply Current vs. Temperature
10 mA
1 mA
100 nA
10 nA
1 nA
V+ = 15 V, V– = –15 V
V+ = 16.5 V, V– = –16.5 V
= 5 V, V = 0 V
V
= 5 V, V = 5 V, 50% D Cycle
L
IN
V
L
IN
1 mA
I+, I–
100 mA
I+, I–
100 pA
10 pA
1 pA
10 mA
1 mA
I
L
I
GND
100 nA
0.1 pA
–55 –40 –20
0
20 40 60 80 100 120
100
1 k
10 k
100 k
1 M
10 M
f – Frequency (Hz)
Temperature (_C)
6
Siliconix
S-52880—Rev. D, 28-Apr-97
TEMIC [ TEMIC SEMICONDUCTORS ]
