DG417/418/419
Test Circuits (Cont’d)
+5 V
+15 V
DV
O
V
O
V
V+
D
L
R
g
S
V
O
IN
X
OFF
ON
OFF
IN
GND
C
10 nF
V
L
g
3 V
V–
Q = DV x C
O
L
–15 V
Figure 5. Charge Injection
+5 V
+15 V
C
C
+5 V
+15 V
V
V+
D
L
C
C
S
S
V
1
S
R = 50 W
g
V
L
V+
V
O
50 W
S
D
V
S
V
O
2
R = 50 W
g
R
L
IN
R
L
0V, 2.4 V
IN
GND
0.8 V
GND
V–
C
V
C
V–
–15 V
–15 V
S
V
S
Off Isolation = 20 log
X
Isolation = 20 log
TALK
V
O
V
O
C = RF bypass
Figure 6. Crosstalk (DG419)
Figure 7. Off Isolation
+5 V
+15 V
C
C
V+
D
V
L
S
V
S
V
O
R = 50 W
g
R
L
IN
0V, 2.4 V
GND
V–
C
–15 V
Figure 8. Insertion Loss
8
Siliconix
S-52880—Rev. D, 28-Apr-97
TEMIC [ TEMIC SEMICONDUCTORS ]
