TE13004D
•
TE13005D
Typical Characteristics
(T
case
= 25
_
C unless otherwise specified)
100
P
tot
– Total Power Dissipation ( W )
2.2 K/W
10
12.5 K/W
I
C
– Collector Current ( A )
10
100
TE13004D
TE13005D
t
p
=10
m
s
50
m
s
1
100
m
s
500
m
s
0.1
1
25 K/W
0.1
0.01
0.001
0
25
50
75
100
125
150
50 K/W
R
thJA
= 85 K/W
t
p
/T 0.01
T
case
= 25°C
0.01
1
95 10965
v
1ms
5ms
DC
100
1000
10000
10
95 10602
T
case
(
°C
)
V
CE
– Collector Emitter Voltage ( V )
Figure 5. P
tot
vs.T
case
- Collector Emitter Saturation Voltage (V)
10
10
Figure 8. I
C
vs. V
CE
- Base Emitter Saturation Voltage (V)
1
2A
4A
T
case
= 25°C
I
C
= 8A
1
0.5A
1A
4A
2A
0.1
I
C
= 0.5A
1A
CEsat
T
= 25°C
0.01
case
0.01
0.1
BEsat
1
10
95 9788
0.1
0.01
V
0.1
1
10
V
95 9789
I
B
- Base Current (A)
I
B
- Base Current (A)
Figure 6. V
CEsat
vs. I
B
100
- Forward DC Current Transfer Ratio
- Forward DC Current Transfer Ratio
25
Figure 9. V
BEsat
vs. I
B
T
case
= 25°C
20
0.5A
15
1A
2A
10
5
0
0
2
4
6
8
10
V
CE
- Collector Emitter Voltage (V)
I
C
= 4A
T
case
= 25°C
10V
10
5V
V
CE
= 2V
FE
h
1
0.01
0.1
1
10
95 9786
95 9785
I
C
- Collector Current (A)
Figure 7. h
FE
vs. I
C
h
FE
Figure 10. h
FE
vs. V
CE
6 (9)
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
TEMIC [ TEMIC SEMICONDUCTORS ]
